IPD090N03L G

Type IPD090N03L G E8177 OptiMOS™3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS(on),max 9 mW ID 40 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating Type IPD090N03L G E8177 Package PG-TO252-3-11 Marking 090N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 40 V GS=10 V, T C=100 °C 37 V GS=4.5 V, T C=25 °C 40 V GS=4.5 V, T C=100 °C 30 Unit A Pulsed drain current2) I D,pulse T C=25 °C 280 Avalanche current, single pulse3) I AS T C=25 °C 40 Avalanche energy, single pulse E AS I D=12 A, R GS=25 W 40 mJ Reverse diode dv /dt dv /dt I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS 1) ±20 V J-STD20 and JESD22 Rev. 2.0 page 1 2014-01-14 IPD090N03L G E8177 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 42 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 3.6 minimal footprint - - 75 6 cm² cooling area4) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 10.8 13.5 mW V GS=10 V, I D=30 A - 7.5 9 - 1.1 - W 26 53 - S Gate-source leakage current Drain-source on-state resistance 5) Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=30 A V µA 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 2.0 page 2 2014-01-14 IPD090N03L G E8177 Parameter Values Symbol Conditions Unit min. typ. max. - 1200 1600 - 460 610 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 24 - Turn-on delay time t d(on) - 4.0 - Rise time tr - 3 - Turn-off delay time t d(off) - 15 - Fall time tf - 2.6 - Gate to source charge Q gs - 4.0 - Gate charge at threshold Q g(th) - 1.8 - Gate to drain charge Q gd - 1.8 - Switching charge Q sw - 3.8 - Gate charge total Qg - 7.2 9.6 Gate plateau voltage V plateau - 3.4 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 15 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.3 8.3 Output charge Q oss V DD=15 V, V GS=0 V - 12 - - - 37 - - 280 V DD=15 V, V GS=10 V, I D=30 A, R G,ext=1.6 W pF ns Gate Charge Characteristics6) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.93 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2014-01-14 IPD090N03L G E8177 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 40 40 30 30 ID [A] Ptot [W] 50 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 0.5 102 10 µs 1 0.2 ZthJC [K/W] 100 µs ID [A] DC 101 1 ms 0.1 0.05 0.02 0.01 0.1 10 ms single pulse 100 10-1 0.01 10-1 100 101 102 VDS [V] Rev. 2.0 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-01-14 IPD090N03L G E8177 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 20 5V 4.5 V 100 16 3.5 V RDS(on) [mW] 80 ID [A] 4V 10 V 4V 60 12 4.5 V 5V 10 V 8 40 3.5 V 4 20 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 20 40 VDS [V] 60 80 100 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 80 60 60 ID [A] gfs [S] 100 40 40 20 20 175 °C 25 °C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.0 0 20 40 60 ID [A] page 5 2014-01-14 IPD090N03L G E8177 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 16 2.5 14 2 10 98 % 1.5 8 VGS(th) [V] RDS(on) [mW] 12 typ 6 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 Tj [°C] 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 25 °C 103 Ciss 102 175 °C, 98% IF [A] C [pF] Coss 102 175 °C z Crss 25 °C, 98% 101 101 100 100 0 10 20 30 VDS [V] Rev. 2.0 0 0.5 1 1.5 2 VSD [V] page 6 2014-01-14 IPD090N03L G E8177 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 24 V 10 100 °C 25 °C VGS [V] IAV [A] 8 150 °C 10 6 4 2 1 10-1 0 100 101 102 0 103 4 tAV [µs] 8 12 16 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 VBR(DSS) [V] 30 28 26 V gs(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.0 page 7 2014-01-14 IPD090N03L G E8177 Package Outline Rev. 2.0 PG-TO252-3 page 8 2014-01-14 IPD090N03L G E8177 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2014-01-14